Abstract
AbstractRadiation effects of 2 MeV Ar+ ions on the crystallization of copper films were investigated with or without oxygen adsorption. Metal copper films of 1-5 nm thickness deposited on SrTiO3 (100) at 300K. by evaporation consisted of fine crystals with random orientation. The crystals were grown without epitaxial relationship to the substrate by ion irradiation. The epitaxial growth of copper crystals was achieved by the combined use of oxygen adsorption and ion irradiation. The epitaxial relationship between the film and the substrate was determined Cu (100) // SrTiO3( 100) and Cu [001] // SrTiO3 [001].
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