Abstract
Based on a one-dimensional valley junction model, the effects of intervalley scattering on the valley transport properties are studied. We analytically investigate the valley transport phenomena in three typical junctions with both intervalley and intravalley scattering included. For the tunneling between two gapless valley materials, different from conventional Klein tunneling theory, the transmission probability of the carrier is less than 100% while the pure valley polarization feature still holds. If the junction is composed of at least one gapped valley material, the valley polarization of the carrier is generally imperfect during the tunneling process. Interestingly, in such circumstance, we discover a resonance of valley polarization that can be tuned by the junction potential. The extension of our results to realistic valley materials are also discussed.
Highlights
Valley is a new degree of freedom of the charge carriers
If the junctions contain gapped valley materials at least in one terminal, the intervalley scattering always lead to a partial change of the valley polarization during the tunneling process
The valley materials that have been successfully fabricated in experiments are two- or three-dimensional with complicated electric structure[42,43,44,45]
Summary
Valley is a new degree of freedom of the charge carriers. It exists in a crystalline material with energetically degenerate but inequivalent band structures. Due to the intervalley scattering, the Klein tunneling theory, which predicts that the carriers experience a perfect tunneling with 100% transmission probability between two gapless valley materials, is invalid[34,35]. If the junctions contain gapped valley materials at least in one terminal, the intervalley scattering always lead to a partial change of the valley polarization during the tunneling process.
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