Abstract
Transient photocurrent decay experiments were carried out to study the effects of internal potential barriers, which could be due to filled traps and metallic inclusions, on the detrapping process in semiconductors. Experiments were carried out with single crystals of Cu2O, annealed in various ways, because of the ease in inducing large defects in this material. It was found that samples of Cu2O with different defect structures had different values of trapping parameters. These different values are explained in terms of barrier formation at the trapping centres. For those samples of Cu2O that contain copper precipitates, the presence of asymmetrical barriers is proposed in order to explain the difference in the trapping parameters when compared with the standard type of Cu2O.The field dependent behaviour of the detrapping time in samples of Cu2O that do not contain copper precipitates could be explained by the presence of both the Poole–Frenkel effect and the photo-impact ionization of the traps. Those samples that contain copper precipitates do not show any field dependent behaviour of the detrapping process, probably owing to the formation of internal space charge regions.
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