Year-end Sale % OFF 
Abstract
We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) characterization. Deep-level C (EC–ET=0.25eV), a majority carrier trap related to isolated point defects, gives rise to a negative transient when the bias stimulates it only in the bulk region and to a positive transient when the filling pulse is such that the QW region is probed. We explain this behavior by a model based on the confining effects of QW internal fields on the charge emitted by deep levels.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
