Abstract
ABSTRACTEffects of intermittent deposition on the defect density in hydrogenated Amorphous silicon (a-Si:H) are investigated at various substrate temperatures by using a mechanical shutter, while maintaining the discharge continuously. The intermittent deposition experiments, where monolayer growth and intermission (waiting time) are repeated in cycles, enable us to study surface dangling bond (DB) recombination and thermal hydrogen desorption separately from other reactions on the growth surface. The defect density in films prepared at lower substrate temperatures decreases with the waiting time, while that deposited at higher substrate temperatures increases with the waiting time.
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