Abstract
A theoretical scheme describing effects of interfacial profiles on the properties of confined excitons in InxGa1−xAs/GaAs spherical quantum dots (QDs) is presented. A two parameter variational method is used to calculate the heavy-hole and light-hole exciton energy. Our numerical results show differences in the ground state exciton energy higher than 100meV due to gradual rather than abrupt interfaces in a 35Å QD.
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