Effects of interfacial Oxide layer on short-channel polycrystalline source and drain MOSFET's

Abstract

Using a novel self-alignment approach, the characteristics of polycrystalline source and drain MOSFET's with and without a deliberately grown oxide under the polycrystalline regions are compared. The interfacial oxide is shown to suppress short-channel effects in the shortest channel devices studied, but this improvement is at the expense of increased source-to-drain contact resistance in the present devices. The devices without the interfacial oxide are also expected to have superior hot-carrier performance.