Abstract
Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance–voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO 2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO 2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
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