Abstract
Columnar type-II GaSb quantum dots (QDs) in GaAs are studied theoretically to clarify how electronic states are affected by the interface grading caused by the interdiffusion of Sb and As. Truncated-cone-shaped QD stacks are analyzed as a function of the diffusion length Ld, where the stacking dot number N is varied from 1 to 4. The energies of heavy- and light-hole ground states Ehh and Elh, respectively are calculated. The heavy hole is the lowest state when N = 1 and 2, and Elh is lower than Ehh for N = 4. When N = 3, the lowest state changes from light holes to heavy holes as Ld increases. We also evaluate the overlap Θ between the electron and hole wave functions, which determines the strength of optical transition. It is found that Θ changes by 2–3 orders of magnitude depending on N and Ld.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
