Abstract
The compressibility χ of dilute two-dimensional electron and hole gases in GaAs semiconductor structures has been studied in the ranges of the interaction parameter r s = 1 –2.5 and r s = 10 –30 for the electron and hole system, respectively. Nonmonotonic dependence of χ - 1 with an upturn at low carrier densities is observed. Despite the large difference in r s the behavior of χ - 1 in both systems can be accurately described by the theory of nonlinear screening of disorder by the carriers.
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