Abstract
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.
Highlights
To satisfy the requirements for the generation display such as large area, high resolution and high frame rate, and other applications such as sensing, signal amplification, signal processing and RFID tags, thin film transistor technologies using oxide semiconductors have been investigated by many researchers and engineers very actively, due to large-area uniformity, low off current and high field effect mobility [1–15]
To improve the various properties of IGZO thin film transistors (TFTs) array, the oxide channel layers were treated by intense pulsed light (IPL) annealing at atmospheric ambient and the back-channel surfaces of IGZO channel layers were passivated by photo-sensitive polyimide (PSPI)
The IGZO TFTs treated by IPL rapid annealing without PSPI passivation showed the average field effect mobility of 1.54 cm2/Vs, and a subthreshold swing (S.S.) of 0.708 V/decade
Summary
To satisfy the requirements for the generation display such as large area, high resolution and high frame rate, and other applications such as sensing, signal amplification, signal processing and RFID tags, thin film transistor technologies using oxide semiconductors have been investigated by many researchers and engineers very actively, due to large-area uniformity, low off current and high field effect mobility [1–15]. To improve the stability of devices, there was a report on top gated solution processed InGaZnO TFTs with light pulse annealing, where the channel was covered with different polymers, which can act as passivation layers and gate dielectrics simultaneously [31]. Based on these pervious reports, we report on the feasibility of the IPL rapid annealing process for multi-component oxide thin film transistors, and the improved uniformity and hysteresis properties of electrical performances for 18 IGZO TFT devices in the area of 10 × 40 mm[2]
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