Abstract
Indium doping of nominally pure n-type CdS containing excess Cd can raise the free-carrier concentration by an order of magnitude over the 77–300 °K temperature range even though this increase is only a small fraction of the total concentration of indium impurities included as dopants. At room temperature such doping does not significantly change the mobility from its value in undoped samples. As temperature is lowered toward 77 °K, neutral-impurity-like scattering in the indium-doped samples causes the mobility to become only weakly dependent on temperature. This is in contrast to undoped n-CdS which is dominated by longitudinal polar optical-phonon scattering and piezoelectric scattering that allow the mobility to rise an order of magnitude as temperature is lowered from 300 to 77 °K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
