Abstract
In this paper, the contribution of Indium (In) to the Gallium Phosphide (GaP) composition of solar cell was investigated to know the effectiveness of the In when its being substitute to GaP layer on the top layer of Silicon (Si) substrate. The substitution was made to the Ga1-xInxP for the range of (0≤x≤0.5). The highest efficiency was 10.1235% for x=0.5 for the Ga1-xInxP. In contribution shows a higher efficiency compared to single layer GaP which only about 5.40608%. As the x composition increased, the efficiency becomes higher for each composition increment. The rate of efficiency, increased about 88% and improves current density with a value up to 13.1134mA/cm2.The efficiency obtained in this work is considerably high using simulation tools compared to the previous record for InGaP/Silicon reported in Feb 2014 about 6~11.2% by fabrication method.
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