Abstract
The effects of indium doping on the optical properties of AlAs/GaAs quantum wells (QWs) and the electrical properties of inverted AlGaAs/GaAs two-dimensional electron gas (2DEG) were investigated. It is found that incorporation of a small amount of In in AlAs layers can decrease the photoluminescence linewidths of AlAs/GaAs QWs drastically and a small amount of In doping in AlGaAs layers can increase significantly the electron mobilities of inverted AlGaAs/GaAs 2DEG at 77 K. All these results demonstrate that In doping can improve the interface roughness because In as a surfactant can enhance the surface migration of Al adatoms during molecular beam epitaxy.
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