Abstract
In this paper, indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method, and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional (1D) SnO2 nanostructures have been studied. It is found that indium doping concentration can affect the epitaxial growth, morphology and the electrical conductance of 1D SnO2 nanostructures. It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.
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Schedule a callMore From: Science in China Series G: Physics, Mechanics and Astronomy
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