Abstract
The effects of the in-plane strain on the magnetic properties of LaMnO3 thin films are calculated using an elastic energy expression and a tight binding Hamiltonian with electron-lattice coupling. Tensile uniaxial strain of the order of 2%, which is the order of the magnitude of those induced in thin films by lattice mismatch with substrates, is found to change the magnetic ground state from A-type antiferromagnetic state to purely antiferromagnetic state.
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