Abstract
The effect of impurity redistribution on the n+‐diffused layer of silicon solar cells has been studied. The impurity concentration was profiled by four‐point‐probe differential Hall and resistivity measurements. The electric field gradient and the mobility gradient in the diffused region were obtained from the impurity profiles. Short‐circuit current was calculated from the effective recombination lifetime deduced from electric field gradient and mobility gradient results. The calculated short‐circuit current was compared with measured values as a function of wavelengths and found to be in reasonably good agreement.
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