Abstract
The effect of impurity redistribution on the n+‐diffused layer of silicon solar cells has been studied. The impurity concentration was profiled by four‐point‐probe differential Hall and resistivity measurements. The electric field gradient and the mobility gradient in the diffused region were obtained from the impurity profiles. Short‐circuit current was calculated from the effective recombination lifetime deduced from electric field gradient and mobility gradient results. The calculated short‐circuit current was compared with measured values as a function of wavelengths and found to be in reasonably good agreement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.