Abstract
In this work we report the effects of impurity concentration and crystallization temperature on the crystalline orientation and final layer resistivity of poly-crystalline films obtained from a-Si:H layers deposited by PECVD at 225 °C followed by a hydrogen plasma process in the same PECVD equipment in which they are deposited. Films were characterized electrically, by X-ray diffractometry and by transmission electron microscopy. Crystallized films were used to fabricate poly-Si TFTs.
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