Abstract
The impurity-assisted Auger recombination rates in highly doped semiconductors are calculated on the basis of the semiempirical pseudopotential method, which has recently been developed for the Green's-function analysis of the impurity-band tails. The calculation is an alternative to the previously reported calculation based on the Green's function derived by Bonch-Bruevich, which well describes only the intraband states far from the tail ones at high doping levels. It is shown that the effect of the tail states on the Auger recombination is important only at low temperatures in GaAs and InP, the band-gap energy of which is much larger than the spin split-off energy, and over a wide temperature range in GaSb and InAs, for which both energies are comparable.
Published Version
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