Abstract
It has been reported that some types of impurities severely degrade resist performance of chemically amplified resists. The effects of impurities on the processes of acid generation in the chemically amplified electron beam (EB) and X-ray resists have been studied by means of nanosecond pulse radiolysis. Amines, water, oxygen, alcohols, silanol and casting solvents were used as impurities. The effects of the impurities in the model solutions of chemically amplified resists (onium salt solutions in m-cresol) were measured using pyrene as an indicator of protonation and charge transfer reaction. The rate constants for the reactions of several kinds of impurities with proton adducts of m-cresol were obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
