Abstract
The resonant transmission coefficients for GaAs/AlAs double-barrier structures are estimated from the d2I/dV2-V characteristics of resonant tunneling diodes and the effects of impurities doped in these structures are investigated. The estimation method was proven to be reliable by comparing the I-V curve reproduced from the experimentally estimated coefficients with the measured curve. Double peaks were found in the transmission coefficient for samples doped with Si in the well. The two peaks observed are probably attributable to tunneling through the quasi-bound state created by impurities and to tunneling through the resonant state.
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