Abstract
The Pd2Si growth kinetics for evaporated Pd films on (111) Si have been investigated by means of 2 MeV 4He+ backscattering spectrometry for as-deposited and high dose H implanted samples in the 200–250 °C temperature range. The implantation energy has been chosen so that most of H atoms stop near the Si/Pd interface. The changes in the H distribution in the annealed samples have been investigated by means of the 1H(15N, αγ)12C resonant nuclear reaction. An increase of the growth rate and a decrease of the activation energy of the silicide formation process have been detected in the implanted samples with respect to the as-deposited ones. The thermal treatment induces a noticeable decrease of H content.
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