Effects of implantation temperature and annealing on structural evolution and migration of Se into glassy carbon

Abstract

The use of glassy carbon (GC) as a future nuclear waste storage material depends on its capability to retain all radioactive fission products found in spent nuclear fuels. Selenium (79Se) is found in trace amounts in uranium ores, spent, and reprocessed nuclear fuel. This work investigates the effects of implantation temperature and annealing on the structural evolution and migration of Se implanted GC. To achieve these objectives, 150 keV Se+ was implanted into GC samples separately at room temperature (RT) and 200 °C to a fluence of 1 × 1016 cm−2. Some of the as-implanted samples were annealed at 1000, 1100 and 1200 °C for 5h and characterised by transmission electron microscopy (TEM), Raman spectroscopy, and secondary ion mass spectrometry (SIMS). Both TEM and Raman spectroscopy showed that implantation caused defects in the GC structures, with more defects in the RT as-implanted sample. Annealing caused the healing of both sample types but retained some radiation damage. No migration of Se atoms was observed in the RT and 200 °C as-implanted samples. However, a different migration behaviour was seen after annealing the RT and 200 °C samples up to 1200 °C, attributed to the trapping and de-trapping of Se atoms in different amounts of defect induced by implantation.