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Abstract
Low-temperature photoluminescence has been employed to study the 4d transition metal Ag in GaAs as a function of hydrostatic pressure up to 33 kbar, and as a function of phosphorus alloying. A pressure derivative of 0.5\ifmmode\pm\else\textpm\fi{}0.2 meV/kbar and an alloy derivative of 4\ifmmode\pm\else\textpm\fi{}1 meV/at. % P were found. The pressure derivative is equal to that determined for the 3d transition-metal impurity Cu but lower than that for the 3d transition-metal impurity Mn, which shows that transition metals do not provide an exact common reference level in III-V semiconductors. The random alloy splitting of the Ag-related emission due to phosphorus atoms on the nearest-neighbor site is about 50 meV, thus continuing the trend for the previously studied Cu and Mn. This is also in agreement with Ag being substitutional on a Ga site.
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