Abstract
ABSTRACTA reaction engineering model of the mercury sensitized photochemical vapor deposition of amorphous silicon-germanium thin films is used in conjunction with experimental results to describe the role of hydrogen radical reactions in determining film composition, hydrogen bonding and microcrystallinity. Selective removal of silicon from the film by hydrogen radicals is shown to increase with decreasing temperature, raising the germanium content of films in hydrogen diluted depositions below 2 torr. Etching of a-Ge:H by hydrogen radicals is determined to be nearly two orders of magnitude slower than that of a-Si:H. Hydrogen radicals are also shown to promote microcrystallinity by selectively removing amorphous phase silicon and bonded hydrogen.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
