Abstract
In this study, we investigated the physical and chemical properties of H 2 plasma-treated tin oxide (SnO X ) thin films, followed by their applications in ambipolar thin-film transistors (TFTs). Finely controlled H 2 implantation was carried out using a reactive-ion-etching system at a radio frequency power of 30 W and under various exposure times. H 2 plasma treatments induced changes in the chemical structures and surface morphologies of the SnO X thin films, including a partial phase transformation of Sn and SnO to SnO 2 . The defects originating from oxygen vacancies (O Vac s) in the SnO X thin films were passivated by H via the formation of Sn–H bonds, which decreased the density of subgap states in the SnO X thin films. The H 2 plasma-treated SnO X TFTs showed considerably improved ambipolarity and electrical performance. Complementary metal–oxide–semiconductor (CMOS) logic inverters comprising H 2 -plasma-treated ambipolar SnO X TFTs exhibited a maximum gain of 34.5 V/V at a supply voltage of 10 V. The results of this study present the meaningful investigation of H 2 plasma-treated ambipolar SnO X TFTs that can be used to fabricate CMOS circuits for various applications.
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