Abstract
Hydrogen is shown to play an important role in chemically prepared semiconductor surfaces covered by metals. The stability in air of a hydrogen-terminated silicon surface is such that one should be able to form an ideal Schottky contact after metal evaporation. An ideal Ti Schottky contact on chemically prepared p-type silicon is observed after hydrogen is drifted away from the metal-semiconductor interface by reverse-bias low-temperature annealing. It is argued that the observed degraded electrical properties of chemically prepared Schottky contacts result from the effects of the entry of hydrogen into the silicon and hydrogen passivation (deactivation) of dopant atoms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
