Abstract
Hydrogenation effects on the structural relaxation and defect evolution in amorphous silicon (a-Si) prepared by ion implantation and evaporation have been investigated using Raman scattering spectroscopy and positron lifetime measurements. Bond angle deviation Δθ in nonhydrogenated a-Si was significantly reduced due to 300 °C annealing in atomic hydrogen atmosphere. This indicates that the reduction in Δθ of hydrogenated amorphous silicon (a-Si:H) is not only due to relaxation during the deposition process of a-Si:H films as proposed by Jackson et al. [Philos. Mag. B 64, 611 (1991)] but also due to posthydrogenation of nonhydrogenated a-Si. It was also found that agglomeration of vacancy-type defects in evaporated a-Si during 450 °C annealing is enhanced after posthydrogenation, while no remarkable enhancement can be seen in a-Si prepared by ion implantation.
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