Abstract
Abstract We summarize our recent results in the effects of hydrogen on defects in germanium. Two types of hydrogen-related defect states were observed. Undoped germanium crystals which were irradiated with 1.0 MeV electrons and subsequently implanted with 27 keV hydrogen exhibited two dominant electron traps at E c –0.36 eV and E c –0.41 eV. A divacancy-like defect associated with the level at E c –0.41 eV becomes more stable when the defect captures hydrogen atoms. Sb-doped germanium crystals which were irradiated with 2.0 MeV electrons exhibited two dominant electron traps at E c –0.23 eV and E c –0.52 eV. Subsequently implantation with 25 keV hydrogen in the sample does selectively passivate the 0.23 eV level associated with a defect containing antimony. The 0.23 eV level reduced by hydrogen implantation annealed out at 70°C, much lower than annealing temperature of the level produced by the electron irradiation alone.
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