Abstract
Surface morphology and microstructure of indium tin oxide (ITO) thin films sputter deposited without heat treatment were obviously different from each other depending on the hydrogen concentration [H] in the working gas. The film surface became smoother with increasing [H] to 1%, but nucleation and growth of grains were apparent above [H] = 1.5%. The width of columnar grains in the ≤200 nm-thick films narrowed from ≈100 nm to ≈50 nm with increasing [H] from 0% to 1.5%. Randomly oriented and agglomerated grains were observed for the film deposited with [H] = 3.6%. Hydrogen added to the working gas induced reduction of the grain size, and then resulted in lowering of the carrier mobility.
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