Abstract
The effects of annealing MOS oxides at high temperatures in hydrogen or deuterium have been studied. Annealing at temperatures above ≈800° C causes a dramatic increase in the radiation sensitivity of the oxide. High temperature annealing also appears to cause a decrease in the dielectric strength of the oxide. Secondary ion mass spectrometry (SIMS) profiles of deuterium-annealed oxides reveal a substantial uptake of deuterium during the annealing. These results suggest that exposure of gate oxides to hydrogen at high temperatures should be avoided.
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