Abstract
This paper presents a study of High Power Electromagnetics (HPEM) stress effects on a GaAs (Gallium Arsenide) low-noise amplifier (LNA). This work aims to evaluate such electrical stress effect from circuit to component scale in relation to more general Intentional electromagnetic interference (IEMI) studies. Conducted susceptibility measurements were made on a specifically designed device under test (DUT). Those experiments yielded interesting results concerning exposition of the DUT to destructive values of interference power, as well as its response to non-destructive but significant powers. The destruction process has been analyzed using time-domain and frequency-domain measurements.
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