Abstract
We have made a photoemission study of the effect of hole doping in FeSi realized by Al substitution. While Al substitution up to $30%$ only weakly modifies the valence-band spectrum of FeSi on the energy scale of eV, spectral weight between the Fermi level ${(E}_{F})$ and $\ensuremath{\sim}--0.4 \mathrm{eV}$ is gradually reduced as the Al content increases. The width of the temperature-dependent pseudogap of FeSi extending from ${E}_{F}$ to $\ensuremath{\sim}--50 \mathrm{meV}$ is not reduced by the Al substitution up to $10%.$ These are highly non-rigid-band-like and are quite different from hole doping in a conventional semiconductor.
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