Abstract
Effects of Ho and Ti ions individual doping and co‐doping on the structural, electrical, and ferroelectric properties of the BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ti0.02)O3+δ, and (Bi0.9Ho0.1)(Fe0.98Ti0.02)O3+δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were crystallized in distorted rhombohedral structure containing no secondary or impurity phases confirmed by using an X‐ray diffraction study. Changes in microstructural features, such as grain morphology and grain size distribution, for the doped samples were analyzed by a scanning electron microscopy. From the experimental results, a low electrical leakage (1.2 × 10−5 A/cm2 at 100 kV) and improved ferroelectric properties, such as a large remnant polarization (2Pr) of 52 μC/cm2 and a low coercive field (2Ec) of 886 kV/cm, were observed for the (Bi0.9Ho0.1)(Fe0.98Ti0.02)O3+δ thin film. Fast current relaxation and stabilization observed in the (Bi0.9Ho0.1)(Fe0.98Ti0.02)O3+δ imply effective reduction and neutralization of charged free carriers.
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