Abstract
Accurate control of formation of conducting filaments is one of the most important challenges to solve in order to achieve improved switching characteristics in resistive random-access memory (ReRAM). In this regard, high-pressure hydrogen annealing (HPHA) can be an effective method for accurate control because it can induce in the ReRAM the formation of oxygen vacancies and OH– bonds, the main factors that influence conducting filament formation. Among the various switching processes, the forming process, which represents the first formation of a conducting filament, was investigated to clarify the effects of HPHA on the formation of conducting filaments. HPHA-treated samples were found to exhibit more accurately controlled resistance of the conducting filament, owing to accurate control of the forming process, compared with samples not treated by HPHA.
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