Abstract
We investigated the effects of high-pressure deuterium postmetallization annealing on the reliability characteristics of nonvolatile memory devices with silicon nanocrystals embedded in silicon nitride. By incorporating silicon nanocrystals in silicon nitride, program/erase efficiency and retention characteristics were improved. In addition, the high-pressure deuterium annealed samples showed excellent endurance characteristics and a significantly reduced charge loss rate. The improved reliability can be attributed to the large kinetic isotope effect of deuterium which in turn reduces generation of the interface traps under the program/erase cycles.
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