Abstract
In this study, highly reliable amorphous oxide semiconductor-based thin-film transistors (TFTs) were developed. The Hf concentration was systematically changed in the Hf-incorporated In–Zn–O (HIZO) TFTs, and Hf played an important role in determining the negative bias-illumination instability. The process parameters were optimized in order to obtain HIZO TFTs with an excellent stability. HIZO can be processed on a 6-in. wafer at low temperatures and is almost transparent in the visible range. Thus this material is promising for use in current TFTs as well as future transparent electronic device components with good electrical performance and excellent stability.
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