Abstract
The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra are shown to be described well by a model which allows for smearing of the edges of the bands by the fluctuation potential due to impurities, degeneracy of the carriers at low temperatures, and indirect electron-phonon optical transitions. The dominant mechanism of electron spin relaxation in strained layers is found to be the Bir-Aronov-Pikus mechanism. The parameters of the fluctuation potential and the parameters governing carrier spin relaxation are determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
