Abstract
Single crystals of AgGaS 2 were heat-treated under controlled vapor pressures of constituent elements and the effect of the heat-treatments on the photoluminescence (PL) spectra was examined at 4.2 K. The origins of emissions are discussed in connection with the native defects controlled by the heat-treatments. The emissions observed at 2.63 and 2.673 eV were related to a silver vacancy (V Ag), and those at 2.654 and 2.660 eV were related to a gallium vacancy (V Ga) or a sulfur interstitial (S i). It was confirmed that the two-component activities of AgGaS 2 have to be regulated to specify the lattice defects exactly.
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