Effects of H 2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering

Abstract

Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 °C for transparent electrode applications. This study investigates the effects of H 2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 °C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the deposition temperature ranged from 300 °C to RT, the resistivity of plasma treated films decreased significantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV.