Abstract
Effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 AA) N/sub 2/O-grown oxides are investigated and compared with those for conventional O/sub 2/-grown SiO/sub 2/ films with identical thickness. Results show that TDDB characteristics of N/sub 2/O oxides are strongly dependent on the growth temperature and, unlike conventional SiO/sub 2/, TDDB properties are much degraded for N/sub 2/O oxides with an increase in growth temperature. Large undulations at the Si/SiO/sub 2/ interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N/sub 2/O oxides grown at higher temperatures. >
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