Abstract
Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C.
Highlights
ΔI and ΔV are the differences between the peak and valley currents and voltages, respectively, of the negative differential resistance (NDR) region
Due to the high yield of devices grown at 760 ○C and 810 ○C, the peak-to-valley current ratio (PVCR), peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability
There have been reports of peak tunneling current densities in GaN-based resonant tunneling diodes (RTDs) ranging from 100 kA/cm2 up to 930 kA/cm211,15,16,18,19 their respective peak-to-valley current ratios (PVCRs) are low, which translates to small ΔI
Summary
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters 116, 113501 (2020); https://doi.org/10.1063/1.5139219 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters 114, 203503 (2019); https://doi.org/10.1063/1.5095056 Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B 38, 032214 (2020); https:// doi.org/10.1116/6.0000052
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
