Abstract
We study effects of growth temperature of a capping layer on optical spin properties of In 0.5 Ga 0.5 As quantum dots (QDs) by photoluminescence (PL) spectroscopy including behaviors of the degree of circular polarization (CPD). The PL energy of the ground state shifts to lower energy with decreasing capping growth temperature, which is due to the increase of In composition inside QDs. The temperature dependence of PL intensity from the QD excited states shows the larger thermal activation energy with decreasing capping growth temperature, indicating the suppression of thermal escape of electrons from QDs to barriers. In addition, we observe the lower-energy shift of the CPD spectral peak, associated with decreasing PL energy, where the high CPD values can assure the high quality of these QDs grown with various capping growth temperatures.
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