Abstract
The effects of “growth interruption” on the structure of an MBE grown GaAs/AlAs superlattice were studied by X-ray diffraction measurements using anomalous scattering for gallium and arsenic atoms. The results revealed that “Growth Interruption” improves the distribution of periods of the superlattice and that the period is decreased due to the re-evaporation of Ga-As layers during the interruption.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
