Abstract
In this work, we investigated the correlation between the spacing of primary grain boundaries in sequential lateral solidification (SLS) polycrystalline silicon and the brightness non-uniformity of active matrix organic light emitting diode panels. The oblique line is attributed both to the SLS method and the thin film transistor fabrication process. We found that the oblique line type of brightness non-uniformity disappeared when the spacing of primary grain boundaries is exactly the same in the individual transistor channel or when the non-uniform size is between 2.7 and 3.3 μ m( � Lg < ±10%) in active patterns. © 2014 The Electrochemical Society. [DOI: 10.1149/2.0071408ssl] All rights reserved.
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