Effects of glass additions on energy storage performance of (Pb0.97La0.02)(Zr0.92Sn0.05Ti0.03)O3 antiferroelectric thick films

Abstract

50 μm-thick ( Pb 0.97 La 0.02)( Zr 0.92 Sn 0.05 Ti 0.03) O 3 antiferroelectric (AFE) thick films with different amount of 0.8 PbO –0.2 B 2 O 3 glass additions were fabricated by the screen-printing method on alumina substrate, which was pre-coated with Pt as electrode. The effects of glass additions on dielectric properties and energy storage performance were investigated in details. Due to the enhancement of breakdown strength (BDS) of the specimens by the addition of glass, the energy storage performances of the thick films could be greatly improved. As a result, with 3% glass addition, the BDS of the specimens were as high as 475 kV/cm, the maximum polarization of 34.8 μC/cm2 and the maximum recoverable energy storage density of 7.4 J/cm3 were obtained. The results indicated the ( Pb 0.97 La 0.02)( Zr 0.92 Sn 0.05 Ti 0.03) O 3 (PLZST) thick films have a promising potential application in capacitors for pulsed power systems.