Abstract
Ge-substituted Cu2Sn(S,Se)3 bulks with Cu2(Sn1-xGex)(S,Se)3 formula at x = 0, 0.25, 0.50, 0.75, and 1.0 were synthesized by reactive liquid phase sintering, where the heating process was held at 200°C for 20min before reaching the sintering temperature of 600°C for 30min. In the presence of volatile Sb2S3 sintering aid, the effects on densification, grain boundary, crystalline size, and electrical properties of Ge-substitution were investigated. Cu2(Sn1-xGex)(S,Se)3 showed p-type behavior for all x values. It was found that the mobility was increased sharply and carrier concentration was decreased rapidly as the x-value was increased. The electrical conductivities were found to be 14.0, 22.7, 36.8, 126, and 153S/cm at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. X-ray diffraction (XRD) peaks were shifted to the higher angle and band gaps increased upon successive increasing of the Ge/[Ge+Sn] fraction being 1.19, 1.21, 1.22, 1.24, and 1.26eV at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. The studies of Ge-x-CTSSe bulks were based on GeSn defects and supported by the data of morphological, structural, electrical, and optical properties.
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