Abstract

The continual downscaling of Si-MOSFETs requires the replacement of polycrystalline Si (poly-Si) gate electrodes by metal gate, which avoids such problems of poly-Si gate as gate depletion effects and/or dopant penetration effects. However, it has been reported that the properties of edges of metal gate could metamorphose after high temperature annealing. As a result, threshold voltage varies due to the difference of the work function resulted from the gate edge metamorphose. In this paper, we investigate the effects of GEM on threshold voltage characteristics of MOSFETs via drift-diffusion simulations and clarify the physical mechanism of device property variation.

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