Abstract
AbstractIn electron‐beam (EB) lithography, it is common practice to prepare the resist for exposure using a metal over‐layer or an ion shower to eliminate the charging of the resist. Recent efforts to prototype micromechanical structures using EB lithography methods have avoided the need for resist preparation by using low‐pressure EB lithography methods. While a great deal of research has centered around high‐vacuum electron‐beam (EB) lithography, little research has been conducted concerning the effect of gas chamber pressure on linewidth in low‐pressure EB lithography. In this paper, experimental data are presented linking the gas pressure in low‐pressure EB lithography with lithography line profiles. The results show that as gas pressure is varied, a compromise exists between line broadening and the charging‐up effect.
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