Abstract
ZnO layer was epitaxially grown on GaN template by atomic layer epitaxy (ALE) using Diethylzinc (DEZ) and H2O at the growth temperature of 250 °C. By reflection high-energy electron diffraction (RHEED) measurements, spotty pattern was observed for the ZnO layer directly grown on c-plane sapphire substrate, while streaky pattern was observed for that grown on GaN template. Full-width at half-maximum (FWHM) value of (0002) X-ray rocking curve of ZnO layer was greatly reduced from 4.96° to 0.103° by using GaN template. By photoluminescence (PL) measurements, only the near bandedge emissions were observed. FWHM of the neutral-donor-bound-exciton (D0X) emission line was reduced from 18.7 to 16.1 meV by using GaN template. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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